孙亚男 / 副教授
电子邮箱:sunyanan@sjtu.edu.cn
办公地点:微电子大楼416-2办公室
办公电话:021-34204546-1048
孙亚男博士,现任上海交通大学微纳电子学系副教授,博士生导师。2009年获得上海交通大学微电子学本科学位,2015年获得香港科技大学电子及计算机工程学博士学位,同年加入上海交通大学,从事教学与科研工作。入选上海市扬帆人才计划。IEEE高级会员。
主要研究方向是高能效数字集成电路及系统设计。研究成果发表在IEEE JSSC, TCAS-I, TCAS-II, TCAD, TED, TVLSI等电路与系统权威学术期刊,以及IEEE ISSCC, DAC, DATE, ISCAS等国际重要会议上。曾获IEEE DATE(欧洲设计自动化与测试学术会议)最佳论文提名奖, IEEE ICM(微电子国际会议)的最佳论文奖。主持国家自然科学基金面上项目、上海市“科技创新行动计划”自然科学基金面上项目、上海市扬帆计划项目、CCF腾讯犀牛创意基金等科研项目。担任IEEE/ACM GLVLSI、ICTA、ISQED等国际会议的TPC Member,以及IEEE APCCAS、AICAS国际会议的WiCAS & YPP (Women in Circuits and Systems & Young Professionals Program)主席 ;并担任多个领域权威学术期刊和会议的审稿人。
承担数字集成电路设计及前沿技术等相关课程,致力于产学研协同育人,主持教育部产学合作协同育人项目、校级“双一流”优质课程建设项目等。曾获国家级一流本科课程、上海市高等学校一流本科课程、校级一流本科课程。
【研究方向】
【论文发表】
[1] Y. Sun, D. Wang, L. Xu, Y. Chen, Z. Li, S. Liu, W. He, Y. Liu, H. Yang, and X. Li, “CREAM: Computing in ReRAM-Assisted Energy- and Area-Efficient SRAM for Reliable Neural Network Acceleration,” IEEE Transactions on Circuits and Systems I (TCAS-I), 2023.
[2] Y. Sun, Z. Li, W. Liu, W. He, Q. Wang, and Z. Mao, “BC-MVLiM: A Binary-Compatible Multi-Valued Logic-in-Memory based on Memristive Crossbars,” IEEE Transactions on Circuits and Systems I (TCAS-I), Vol. 70, No. 5, pp. 2048 – 2061, May 2023.
[3] S. Yuan, Y. Sun*, W. He*, Q. Gu, S. Xu, Z. Mao, and S. Tu, “MSLM-RF: A spatial feature enhanced random forest for on-board hyperspectral image classification,” IEEE Transactions on Geoscience and Remote Sensing, Vol. 60, pp. 1-17, July 2022.
[4] Y. Sun, C. Ma, Z. Li, Y. Zhao, J. Jiang, W. Qian, R. Yang, Z. He, and Li Jiang, “Unary coding and variation-aware optimal mapping scheme for reliable ReRAM-based neuromorphic computing,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 40, No. 12, pp. 2495 – 2507, December 2021.
[5] Z. Song, Y. Sun*, L. Chen, T. Li, N. Jing, X. Liang, and L. Jiang*, “ITT-RNA: Imperfection tolerable training for RRAM-crossbar based deep neural-network accelerator,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 40, No. 1, pp. 129-142, January 2021.
[6] C. Lin, W. He, Y. Sun, B. Pei, P. K. Chundi, Z. Mao, and M. Seok, “MEDAC: A metastability condition detection and correction technique for a near-threshold-voltage multi-voltage-/frequency-domain network-on-chip,” IEEE Journal of Solid-State Circuits, Vol. 56, No. 7, pp. 2270-2280, July 2021.
[7] Y. Sun, W. He, Z. Mao, H. Jiao, and V. Kursun, “Monolithic 3D carbon nanotube memory for enhanced yield and integration density,” IEEE Transactions on Circuits and Systems I (TCAS-I), Vol. 67, No. 7, pp. 2431-2441, July 2020.
[8] Y. Sun, J. Gu, W. He, Q. Wang, N. Jing, Z. Mao, W. Qian, and L. Jiang, “Energy-efficient nonvolatile SRAM design based on resistive switching multi-level cells,” IEEE Transactions on Circuits and Systems II (TCAS-II), Vol. 66, No. 5, pp. 753-757, May 2019. (invited paper)
[9] Y. Sun, W. He, Z. Mao, H. Jiao, and V. Kursun, “Metallic-CN-removal-tolerant high-yield six-CNMOSFET SRAM cell for carbon-based embedded memory,” IEEE Transactions on Electron Devices (TED), Vol. 65, No. 3, pp. 1230-1238, March 2018.
[1] L. Xu, S. Liu, Z. Li, D. Wang, Y. Chen, Y. Sun*, X. Li*, W. He, and S. Xu, “CREAM: Computing in ReRAM-assisted energy and area-efficient SRAM for neural network acceleration,” ACM/EDAC/IEEE Design Automation Conference (DAC), 2022.
[2] Z. Meng, Y. Sun, and W. Qian, “Write or not: Programming scheme optimization for RRAM-based neuromorphic computing,” ACM/EDAC/IEEE Design Automation Conference (DAC), 2022.
[3] C. Lin, W. He, Y. Sun, Z. Mao, and M. Seok, “CDAR-DRAM: An in-situ charge detection and adaptive data restoration DRAM architecture for performance and energy efficiency improvement,” ACM/EDAC/IEEE Design Automation Conference (DAC), 2021.
[4] Z. Meng, W. Qian*, Y. Zhao, Y. Sun*, R. Yang, and L. Jiang*, “Digital offset for RRAM-based neuromorphic computing: A novel solution to conquer cycle-to-cycle variation,” Proceedings of the IEEE Design, Automation and Test in Europe Conference (DATE), March 2021.
[5] W. Liu, Y. Sun*, W. He, and Qin Wang, “Design of ternary logic-in-memory based on memristive dual-crossbars,” Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS), May 2021.
[6] C. Ma, Y. Sun*, W. Qian*, L. Jiang*, and R. Yang, “Go unary: A novel synapse coding and mapping scheme for reliable ReRAM-based neuromorphic computing,” Proceedings of the IEEE Design, Automation and Test in Europe Conference (DATE), pp. 1432-1437, March 2020. (Nominated for Best Paper Award)
[7] C. Lin, W. He, Y. Sun, B. Pei, Z. Mao, and M. Seok, “A near-threshold-voltage network-on-chip with a metastability error detection and correction technique for supporting a quad-voltage/frequency-domain ultra-low-power system-on-a-chip,” Proceedings of the IEEE International Solid-State Circuits Conference (ISSCC), pp. 394-396, February 2020.
[8] Z. Song, Y. Zhao, Y. Sun, X. Liang, L. Jiang, “ESNreram: An energy-efficient sparse neural network based on resistive random-access memory,” ACM Great Lakes Symposium on VLSI (GLSVLSI), pp. 291-296, September 2020.
【近年来主要科研及教学获奖】
【授课教学】
本科生:数字逻辑设计(人工智能班),数字集成电路设计,微纳电子科技前沿讲座
研究生:高等数字集成电路设计,集成电路设计前沿技术