- 2018年
-
[2]C. Wang, Y. Sun, S. Hu, L. Jiang, W. Qian, “Variation-aware global placement for improving timing-yield of carbon-nanotube field effect transistor circuit,” ACM Transactions on Design Automation of Electronic Systems, Vol. 23, No. 4, pp. 1-27, June 20
[3]Y. Sun, W. He, Z. Mao, H. Jiao, and V. Kursun, “Metallic-CN-removal-tolerant high-yield six-CNMOSFET SRAM cell for carbon-based embedded memory,” IEEE Transactions on Electron Devices (TED), Vol. 65, No. 3, pp. 1230-1238, March 2018. - 2017年
-
[1] Z. Zhao, W. Sheng, W. He, Z. Mao, and Z. Li, "A static-placement, dynamic-issue framework for CGRA loop accelerator," Design, Automation & Test in Europe Conference & Exhibition (DATE), pp. 1348-1353, 2017.
[10]W. Jin, W. He, J. Jiang, H. Huang, X. Zhao, Y. Sun, X. Chen, and N. Jing, “A 0.33V 2.5μW cross-point data-aware write structure, read-half-select disturb-free sub-threshold SRAM in 130nm CMOS,” Integration, the VLSI Journal, Vol. 58, pp. 27-34, February 2
[13]Y. Sun, W. He, Z. Mao, H. Jiao, and V. Kursun, “High-yield and robust 9T SRAM cell tolerant to removal of metallic carbon nanotubes,” IEEE Transactions on Device and Materials Reliability, Vol. 17, No. 1, pp. 20-31, March 2017. - 2016年
-
- 2015年
-
[5]T. Dickson, Yong Liu, S. Rylov, A. Agrawal, S. Kim, P. Hsieh, J. Bulzacchelli, M. Ferriss, H. Ainspan, A. Rylyakov, B. Parker, C. Baks, L. Shan, Y. Kwark, J. Tierno, and D. Friedman, “A 1.4-pJ/b, Power-Scalable 16x12-Gb/s Source-Synchronous I/O with DFE R - 2014年
-
[6]T. Dickson, Yong Liu, S. Rylov, A. Agrawal, S. Kim, P. Hsieh, J. Bulzacchelli, M. Ferriss,H. Ainspan, A. Rylyakov, B. Parker, C. Baks, L. Shan, Y. Kwark, J. Tierno, and D. Friedman, “A 1.4-pJ/b, Power-Scalable 16x12-Gb/s Source-Synchronous I/O with DFE Re - 2013年
-
[1]Lei Zeng, Xin Yi, Sheng Lu, Yuan Lou, Jianfei Jiang,Hongen Qu, Ning Lan, Guoxing Wang, "Design of a high voltage stimulator chip for a stroke rehabilitation system, IEEE Conference on Engineering in Medicine and Biology Society (EMBC), pp. 834-837, 2013.
[7]B. Rajendran, Y. Liu, J. Seo, K. Gopalakrishan, D. Friedman, and M. Ritter, “RRAM Devices for Large Neuromorphic Systems,” Non-Volatile Memories Workshop, UCSD, March, 2013.
[8]M. Sanduleanu, A. Valdes-Garcia, Y. Liu, B. Parker, S. Shlafman, B. Sheinman, D. Elad, S. Reynolds and D. Friedman, “A 60GHz, Linear, Direct Down-Conversion Mixer with mm-Wave Tunability in 32nm CMOS SOI,” IEEE Custom Integrated Circuits Conference(CICC) - 2012年
-
[7]T. Dickson, Y. Liu, S. Rylov, B. Dang, C. Tsang, P. Andry, J. Bulzacchelli, H. Ainspan, X. Gu,L. Turlapati, M. Beakes, B. Parker, J. Knickerbocker, and D. Friedman, “An 8x10-Gb/s Source-Synchronous I/O System Based on High-Density Silicon Carrier Intercon
[8]J. Knickerbocker, P. Andry, E. Colgan, B. Dang, T. Dickson, X. Gu, C. Haymes, C. Jahnes, Y. Liu, J. Maria, R. Polastre, C. Tsang, L. Turlapati, B. Webb, L. Wiggins and S. Wright, “2.5D and 3D Technology Challenges and Test Vehicle Demonstrations,” IEEE El - 2011年
-
[7]J. Seo, B. Brezzo, Y. Liu, B. Parker, S. Esser, R. Montoye, B. Rajendran, J. Tierno, L. Chang, D. Modha, and D. Friedman, “A 45nm CMOS Neuromorphic Chip with a Scalable Architecture for Learning in Networks of Spiking Neurons,” IEEE Custom Integrated Circ
[8]J Maria, B Dang, SL Wright, CK Tsang, P Andry, R Polastre, Yong Liu, L Wiggins, and JU Knickerbocker, “3D Chip stacking with 50 μm pitch lead-free micro-c4 interconnections,” IEEE Electronic Components and Technology Conference (ECTC), pp. 268-273, 2011.
[9]T. Dickson, Y. Liu, S. Rylov, B. Dang, C. Tsang, P. Andry, J. Bulzacchelli, H. Ainspan, X. Gu,L. Turlapati, M. Beakes, B. Parker, J. Knickerbocker, and D. Friedman, “An 8x10-Gb/s Source-Synchronous I/O System Based on High-Density Silicon Carrier Intercon
[10]Y. Liu, B. Kim, T. Dickson, J. Bulzacchelli, and D. Friedman, “A 10Gb/s Compact Low-Power Serial I/O with DFE-IIR Equalization in 65nm CMOS,” IEEE Solid-State Circuits, Newsletter, Vol. 16, Issue 1, 2011. - 2010年
-
[5]F. Liu, X. Gu, K. A. Jenkins, E. Cartier, Y. Liu, P. Song, and S. J. Koester, “Through-Silicon Via Inductance and Capacitance Characterization,” 60th Electronic Components and Technology Conference (ECTC), June, 2010. - 2009年
-
[1]N. Sun, Y. Liu, H. Lee, R. Weissleder, and D. Ham, “CMOS RF Biosensor Utilizing Nuclear Magnetic Resonance,” IEEE Journal of Solid-State Circuits (JSSC), vol. 44, no. 5, pp.1629-1643, May 2009.
[2]B. Kim, Y. Liu, T. Dickson, J. Bulzacchelli, and D. Friedman, “A 10Gb/s Compact Low-Power Serial I/O with DFE-IIR Equalization in 65nm CMOS,” (Special issue paper) IEEE Journal of Solid-State Circuits (JSSC), vo. 44, no. 12, pp. 3526-3538, Dec. 2009. (JSS
[3]Y. Liu, B. Kim, T. Dickson, J. Bulzacchelli, and D. Friedman, “A 10Gb/s Compact Low-Power Serial I/O with DFE-IIR Equalization in 65nm CMOS,” ISSCC Dig. of Tech. Papers, pp. 182-183, Feb. 2009. (Beatrice Winner Award for Editorial Excellence, ISSCC, 200 - 2008年
-
- 2007年
-
- 2006年
-
- 2005年
-
- 2004年
-
- 2003年
-
- 2002年
-
- 2001年
-
SheXi Agricultural Development Co., Ltd @2018.light