课程大纲
Schedule：
| Week | Content / Hours |
| 1 | Course introduction (syllabus) (0.5hr) Chapter 1: Introduction (1.5hr) |
| Chapter 2 Fundamentals of semiconductor: 2.1 Fundamentals of semiconductor materials and crystals (2hr) |
|
| 2 | 2.2 Carrier model -I (2hr) |
| 2.2 Carrier model -II(2hr) | |
| 3 | 2.3 Carrier model-III (Additional course about Matlab programing) |
| 2.3 Carrier transportation-I (2hr) | |
| 4 | 2.3 Carrier transportation-II (2hr) |
| Chapter 3 PN junction and PN diode 3.1 PN junction-electrostatic characteristics-I(2hr) |
|
| 5 | 3.1 PN junction-electrostatic characteristics-II(2hr) |
| 3.2 PN diode- IV characteristics-I(2hr) | |
| 6 | 3.2 PN diode- IV characteristics-II (2hr) |
| 3.3 Small singal model of PN diode (1hr) 3.4 Transient response of PN diode (1hr) |
|
| 7 | 3.5 Special diodes and photodiodes (2hr) |
| Chapter 4 Metal-semiconductor contact and Schottley diode-I (2hr) | |
| 8 | Chapter 4 Metal-semiconductor contact and Schottley diode-II (1hr) Review |
| Project 1 | |
| 9 | Midterm Exam |
| Chapter 5 Field effect transistor (FET) and MOSFET 5.1 MOS structure -I (2hr) |
|
| 10 | 5.2 MOS structure -II (2hr) |
| 5.2 MOS structure -III (2hr) | |
| 11 | 5.3 MOSFET device-I (2hr) |
| 5.3 MOSFET device-II (2hr) | |
| 12 | Project 2(Holiday) |
| 5.4 Modern MOSFET -I (scalability) (2hr ) | |
| 13 | 5.4 Modern MOSFET -II (SCE) (2hr) |
| 5.5 Modern MOSFET -III (Modern/Future devices) (2hr) | |
| 14 | Chapter 6 Bipolar Junction Transistor and other Junction device 5.1 Fundamentals of BJT(2hr) |
| 5.2 BJT electrostatic characteristics (2hr) | |
| 15 | 5.3 Dynamic response model of BJT(2hr) |
| 5.4 Other junction devices (2hr) | |
| 16 | Review |
| Final Exam |