李秀妍

李秀妍 / 副教授

研究方向：半导体材料与器件
电子邮箱：xiuyanli@sjtu.edu.cn
办公电话：021-3420-4546-1058
办公地点：微电子楼412

 

 

　　李秀妍，副教授，分别于2009、2012年于华东师范大学、同济大学物理系取得学士、硕士学位，2015年于日本东京大学取得工学博士学位，之后在美国罗格斯大学从事博士后研究工作。现任上海交通大学微纳电子学系长聘教轨副教授，博士生导师。

　　长期从事面向集成电路和电力电子的半导体器件物理和工艺研究。研究方向涉及高迁移率小尺寸MOS器件、新型铁电逻辑和存储器件、以及高功率宽禁带半导体器件的基础物理研究和工艺研发。迄今为止以第一作者在知名学术期刊和会议发表论文近30篇，在知名国际学术会议口头报告成果近20次，获得美国日本等学术相关奖励六项；此外，前后主持科研项目6项，包括国家自然科学基金重大研究计划培育项目、国家自然科学基金青年项目、上海市自然科学基金探索类项目、日本丸文财团海外交流项目、美国阿贡国家实验室项目等。

【研究方向】

1. 基于铁电薄膜的负电容晶体管、铁电存储器等新型逻辑运算和存储器件

2. 基于宽禁带半导体SiC和Ga2O3的高功率MOS器件

【论文发表】

电子器件领域顶级会议IEEE IEDM论文及报告

1. X. Li*et al, “Direct relationship between sub-60 subthreshold swing and internal potential instability in MOSFET externally connected to ferroelectric capacitor, International Electron Device Meeting (IEDM), 2018, 31.3.

2. X. Li*et al, “Self-decomposition of SiO2 due to Si-chemical potential increase in SiO2 between HfO2 and substrate”, International Electron Device Meeting (IEDM), 2015, 21.4.

3. X. Li*et al, “Analytical Formulation of SiO2-IL Scavenging in HfO2/SiO2/Si Gate Stacks: A Key is the SiO2/Si Interface Reaction.” International Electron Device Meeting (IEDM), 2014, 21.2.

代表性期刊论文

1. X. Li*,and A. Toriumi,“Zigzag polarization switching due to depolarization feedback in metal/ferroelectric/metal paraelectric/metal system”, Nature Communication, 11, (2020) 1895.

2. X. Li*et al, Interface reaction kinetics in SiGe oxidation, Applied Physics Letter, 115, (2019) 232901.

3. X. Li*et al, “Effect of nitrogen passivation on interface composition and physical stress in SiO2/SiC(4H) structures”, Applied Physics Letter, 113, (2018)131601.

4. X. Li*et al, “Oxidation induced stress in SiO2/SiC structure”, Applied Physics Letter, 110, (2017)141604.

5. X. Li* et al, “Thermodynamic understanding and analytical modeling of interfacial SiO2scavenging in HfO2 gate stacks on Si, SiC and SiGe”, Applied Physics Letter, 110, (2017)142903.

6. X. Li*et al, “Interfacial SiO2 scavenging kinetics in HfO2 gate stacks”, Applied Physics Letter, 109, (2016)202905.

7. X. Li*et al, “Study of Si Kinetics in Interfacial SiO2 Scavenging in HfO2/SiO2/Si Stack.” Applied Physics Express, 8 (2015) 061304.

8. X. Li* et al, “Effect of Si Substrate on Interfacial SiO2Scavenging in HfO2/SiO2/Si Stacks.” Applied Physics Letter, 105, (2014) 182902.

代表性知名国际会议邀请报告及口头报告（含论文） 

1. X. Li*et al, “Impact of substrate orientation on the structure of SiO2/SiC interface”, International Conference on Silicon Carbide Related Materials (ICSCRM), Sep. 28th-Oct. 04th, 2019, Kyoto, Japan. (口头报告)

2. (邀请报告)X. Li et al, “Direct relationship between sub-60 mV/dec subthreshold swing and internal potential instability in MOSFET externally connected to ferroelectric capacitor”, Silicon Device and Materials, Jan. 30th, 2019.

3. X. Li*et al, “Mechanism of Nitrogen Passivation of the SiO2/SiC(4H-0001) MOS structure: Interface Composition, Physical Stress and Electrical Quality”, IEEE Semiconductor Interface Specialists Conference (IEEE SISC), Dec. 5-8th, 2018, San Diego, USA. (口头报告)

4. X. Li*et al, “Impact of “struggle for oxygen” at oxidized interface on SiGe gate stacks”, 2018 International Conference on Solid State Devices and Materials (SSDM), Sep. 9-13th, 2018, Tokyo, Japan. (口头报告)

5. (Highlight talk in ICSCRM) X. Li, A. Ermakov, V. Amarasinghe, T. Gustafsson, L. C Feldman and E. Garfunkel, “In-situ study of stress formation and relaxation during thermal oxidation of SiC”, 2017 International Conference on Silicon Carbide Related Materials (ICSCRM), Sep 17th-22nd, 2017, Washington DC, USA.(口头报告)

6. X. Li*et al, “The SiO2/4H-SiC interfaces: Physical stress, material density and carbon retention”, 2017 Material Research Society fall meeting, Nov. 26th-Dec. 1st, 2017, Boston, USA. (口头报告)

7. X. Li* et al,“Oxidation induced stress in SiO2/SiC system”, 2016 International Conference on Solid State Devices and Materials (SSDM), Sep. 26-29th, 2016, Tsukuba, Japan. (口头报告)

8. X. Li*et al, “Comprehensive understanding of SiO2-IL scavenging in HfO2/SiO2/Si stack”, Will be presented International Conference on Solid State Devices and Materials (SSDM), Sep. 27-30th, 2015, Sapporo, Japan.

9. (邀请报告)X. Li* et al, “Analytical Formulation of SiO2-IL Scavenging in HfO2/SiO2/Si Gate Stacks”, Silicon Device and Materials (SDM), Jan. 27th, 2015, Tokyo, Japan

10. X. Li,T. Yajima, T. Nishimura and A. Toriumi, “The critical role of Si chemical potential in SiO2 scavenging in HfO2 gate stacks”, The 76th Autumn Japanese Society of Applied Physics (JSAP), Sep. 13-16th, 2015, Nagoya, Japan. Young paper award in JSAP

 

本科生专业必修课：《半导体器件原理》

微纳电子学系